Multi-Terminal Device Packaging

ABSTRACT

A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.

REFERENCE TO RELATED APPLICATIONS

The current application is a continuation application of U.S.application Ser. No. 14/834,606, filed on 25 Aug. 2015, which is acontinuation-in-part application of U.S. application Ser. No.14/059,664, now U.S. Pat. No. 9,117,983, filed on 22 Oct. 2013, whichclaims the benefit of U.S. Provisional Application No. 61/716,655, filedon 22 Oct. 2012, all of which are hereby incorporated by reference.

TECHNICAL FIELD

The disclosure relates generally to two terminal devices, and moreparticularly, to a solution for packaging a two terminal device, such asa light emitting diode.

BACKGROUND ART

There are various approaches to packaging light emitting diodes (LEDs).One method of packaging an LED includes providing a substrate cavity,forming an electrode layer on the surface of the substrate cavity, andthen forming an opening within the cavity. An anode and a cathode areseparated by the formation of the opening. A LED chip is placed at thebottom of the cavity and over the opening. The LED chip is electricallyconnected to the anode and the cathode. The formed cavity is filled withpackaging material. An individual LED device is formed by a cuttingprocess and cutting along a cutting line in the cavity.

Another approach provides a package array and a package unit of a flipchip LED. An LED chip is mounted on a ceramic material that is capableof enduring the eutectic temperature of the fabrication process forpackaging. A plurality of metal wires are directly distributed on theceramic material to finish an LED package unit, or a plurality of LEDSare connected in series or in parallel with the metal wires on theceramic material to finish the high density package array.

SUMMARY OF THE INVENTION

Aspects of the invention provide an improved solution for packaging atwo terminal device, such as a LED. In one embodiment, a method ofpackaging a two terminal device includes: patterning a metal sheet toinclude a plurality of openings; bonding at least one two terminaldevice to the metal sheet, wherein a first opening corresponds to adistance between a first contact and a second contact of the at leastone two terminal device; and cutting the metal sheet around each of theleast one two terminal device, wherein the metal sheet forms a firstelectrode to the first contact and a second electrode to the secondcontact.

A first aspect of the invention provides a method of packaging a twoterminal device, the method comprising: patterning a metal sheet toinclude a plurality of openings; bonding at least one two terminaldevice to the metal sheet, wherein a first opening corresponds to adistance between a first contact and a second contact of the at leastone two terminal device; and cutting the metal sheet around each of theleast one two terminal device, wherein the metal sheet forms a firstelectrode to the first contact and a second electrode to the secondcontact.

A second aspect of the invention provides a method of packaging a twoterminal light emitting diode (LED) device, the method comprising:patterning a metal sheet to include a plurality of openings; bonding aplurality of LED devices to the metal sheet, wherein a first openingcorresponds to a distance between a first contact and a second contactof at least one of the LED devices, and a second opening corresponds toa distance between a first LED device and a second LED device; andcutting the metal sheet around each of the LED devices, wherein themetal sheet forms a first electrode to the first contact and a secondelectrode to the second contact.

A third aspect of the invention provides a two terminal light emittingdiode (LED) package array, comprising: a wafer including a plurality oftwo terminal LED devices; and a metal sheet patterned to include aplurality of openings, wherein the metal sheet is bonded to theplurality of two terminal LED devices to form a first electrode and asecond electrode for each of the plurality of two terminal LED devices,such that a first opening of the metal sheet corresponds to a distancebetween a first contact and a second contact of at least one of the LEDdevices and a second opening corresponds to a distance between a firstLED device and a second LED device.

The illustrative aspects of the invention are designed to solve one ormore of the problems herein described and/or one or more other problemsnot discussed.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of the disclosure will be more readilyunderstood from the following detailed description of the variousaspects of the invention taken in conjunction with the accompanyingdrawings that depict various aspects of the invention.

FIG. 1 shows a schematic structure of an illustrative emitting deviceaccording to an embodiment.

FIG. 2 shows an illustrative metal sheet bonded to a wafer according toan embodiment.

FIG. 3 shows an illustrative LED package array according to anembodiment.

FIG. 4 shows an illustrative LED package array according to anembodiment.

FIG. 5 shows an illustrative LED package array according to anembodiment.

FIGS. 6A and 6B show illustrative LED package arrays according toembodiments, while FIGS. 6C and 6D show the corresponding schematics,respectively.

FIG. 7A shows an illustrative package array according to an embodiment,FIG. 7B shows the illustrative package array of FIG. 7A including aplurality of cuts, FIG. 7C shows the corresponding schematic of FIG. 7B,and FIG. 7D shows an illustrative system according to an embodiment.

FIG. 8 shows an illustrative package array according to an embodiment.

FIG. 9 shows an illustrative package array according to an embodiment.

FIG. 10 shows an illustrative package array according to an embodiment.

FIGS. 11A-11C show illustrative packaged two terminal devices accordingto an embodiment.

FIG. 12 shows an illustrative packaged two terminal device within athree dimensional depression according to an embodiment.

FIGS. 13A-13B show illustrative packaged two terminal devices accordingto an embodiment.

FIGS. 14A-14B show illustrative packaged two terminal devices accordingto an embodiment.

FIGS. 15A-15D show illustrative packaged two terminal devices accordingto an embodiment.

FIG. 16 shows an illustrative flow diagram for fabricating a circuitaccording to an embodiment.

It is noted that the drawings may not be to scale. The drawings areintended to depict only typical aspects of the invention, and thereforeshould not be considered as limiting the scope of the invention. In thedrawings, like numbering represents like elements between the drawings.

DETAILED DESCRIPTION OF THE INVENTION

As indicated above, aspects of the invention provide an improvedsolution for packaging a two terminal device, such as a LED. In oneembodiment, a method of packaging a two terminal device includes:patterning a metal sheet to include a plurality of openings; bonding atleast one two terminal device to the metal sheet, wherein a firstopening corresponds to a distance between a first contact and a secondcontact of the at least one two terminal device; and cutting the metalsheet around each of the least one two terminal device, wherein themetal sheet forms a first electrode to the first contact and a secondelectrode to the second contact. As used herein, unless otherwise noted,the term “set” means one or more (i.e., at least one) and the phrase“any solution” means any now known or later developed solution.

Turning to the drawings, FIG. 1 shows a schematic structure of anillustrative two terminal emitting device 10 according to an embodiment.In an embodiment, the emitting device 10 is configured to operate as alight emitting diode (LED). Alternatively, the emitting device 10 can beconfigured to operate as a laser diode (LD). In either case, duringoperation of the emitting device 10, application of a bias comparable tothe band gap results in the emission of electromagnetic radiation froman active region 18 of the emitting device 10. The electromagneticradiation emitted by the emitting device 10 can comprise a peakwavelength within any range of wavelengths, including visible light,ultraviolet radiation, deep ultraviolet radiation, infrared light,and/or the like.

The emitting device 10 includes a substrate 12, a buffer layer 14adjacent to the substrate 12, an n-type cladding layer 16 adjacent tothe buffer layer 14, and an active region 18 having an n-type side 19Aadjacent to the n-type cladding layer 16. Furthermore, the emittingdevice 10 includes a p-type layer 20 adjacent to a p-type side 19B ofthe active region 18 and a p-type cladding layer 22 adjacent to thep-type layer 20.

In a more particular illustrative embodiment, the emitting device 10 isa group III-V materials based device, in which some or all of thevarious layers are formed of elements selected from the group III-Vmaterials system. In a still more particular illustrative embodiment,the various layers of the emitting device 10 are formed of group IIInitride based materials. Group III nitride materials comprise one ormore group III elements (e.g., boron (B), aluminum (Al), gallium (Ga),and indium (In)) and nitrogen (N), such that BwAlxGayInzN, where 0≦W, X,Y, Z≦1, and W+X+Y+Z=1. Illustrative group III nitride materials includeAlN, GaN, InN, BN, AlGaN, AlInN, AlBN, AlGaInN, AlGaBN, AlInBN, andAlGaInBN with any molar fraction of group III elements.

An illustrative embodiment of a group III nitride based emitting device10 includes an active region 18 composed of In_(y)Al_(x)Ga_(1-x-y)N,Ga_(z)In_(y)Al_(x)B_(1-x-y-z)N, an Al_(x)Ga_(1-x)N semiconductor alloy,or the like. Similarly, both the n-type cladding layer 16 and the p-typelayer 20 can be composed of an In_(y)Al_(x)Ga_(1-x-y)N alloy, aGa_(z)In_(y)Al_(x)B_(1-x-y-z)N alloy, or the like. The molar fractionsgiven by x, y, and z can vary between the various layers 16, 18, and 20.The substrate 12 can be sapphire, silicon carbide (SiC), silicon (Si),GaN, AlGaN, AlON, LiGaO₂, or another suitable material, and the bufferlayer 14 can be composed of AlN, an AlGaN/AlN superlattice, and/or thelike.

As shown with respect to the emitting device 10, a p-type metal 24 canbe attached to the p-type cladding layer 22 and a p-type contact 26 canbe attached to the p-type metal 24. Similarly, an n-type metal 28 can beattached to the n-type cladding layer 16 and an n-type contact 30 can beattached to the n-type metal 28. The p-type metal 24 and the n-typemetal 28 can form ohmic contacts to the corresponding layers 22, 16,respectively.

As further shown with respect to the emitting device 10, the device 10can be mounted to a submount 36 via contacts 26, 30. In this case, thesubstrate 12 is located on the top of the emitting device 10 in a flipchip configuration. To this extent, the p-type contact 26 and the n-typecontact 30 can both be attached to a submount 36 via contact pads 32,34, respectively. The submount 36 can be formed of aluminum nitride(AlN), silicon carbide (SiC), and/or the like. Regardless, it isunderstood that emitting device 10 is only illustrative of various typesof devices, which can be packaged in a flip chip configuration.

An embodiment provides a solution for packaging two terminal devices,such as a two terminal LED, that is applicable to an environment where alarge number of devices are epitaxially grown on a wafer. For example, apackaging solution described herein can be implemented in an environmentwhere at least ten devices are grown on a wafer. During the epitaxialgrowth, the device die 10 is formed. Subsequently, the device die 10 canbe placed on a submount 36 via contact pads 32, 34. It is understoodthat FIG. 1 illustrates a flip-chip LED design, where most of theemission occurs through the substrate 12.

To package a plurality of two terminal devices, a metal sheet isprovided to form electrodes for each of the two terminal devices. FIG. 2shows an illustrative metal sheet 40 for packaging two terminal devicesaccording to an embodiment. The metal sheet 40 can comprise anyconductive metal that is designed for forming electrodes to the twoterminal devices. For example, the metal sheet 40 can comprise copper oraluminum. A size of the metal sheet 40 can be selected to be at leastthe size of the wafer 60 that includes the plurality of two terminaldevices 10A, 10B. In one embodiment, the size of the metal sheet 40exceeds the diameter of the wafer 60.

To form the electrodes for each of the two terminal devices 10, themetal sheet 40 is patterned to include a plurality of openings. Forexample, the metal sheet 40 is patterned to include a first opening 42and a second opening 44. The metal sheet 40 can be manufactured toinclude the pattern of the plurality of openings. The width d₁ of thefirst opening 42 corresponds to a distance between a first contact(e.g., p-contact 32) and a second contact (e.g., n-contact 34) of a twoterminal device 10A. The width d₂ of the second opening 44 correspondsto a distance between contacts of a first two terminal device 10A and asecond two terminal device 10B. Although the wafer 60 is shown to onlyinclude four two terminal devices, it is understood that the wafer 60can include any number of two terminal devices. To this extent, themetal sheet 40 can include any number of openings, each of which canhave any width based on the corresponding two terminal device(s) and thedistance between adjacent devices according to the device locations onthe wafer 60. In an embodiment, the metal sheet 40 includes a pattern ofalternating openings 42, 44.

Once the metal sheet 40 is patterned, the patterned metal sheet 40 isbonded to the plurality of two terminal devices 10A, 10B on the wafer60. The patterned metal sheet 40 can be bonded to the plurality of twoterminal devices 10A, 10B using any known technique. For example, thepatterned metal sheet 40 can be die bonded to the plurality of twoterminal devices 10A, 10B. In bonding the patterned metal sheet 40 tothe plurality of two terminal devices 10A, 10B, since the plurality oftwo terminal devices 10A, 10B are located on the wafer 60 in a periodicarrangement, a first contact strip 46 is bonded to a first contact(e.g., p-contact 32) of a device 10A, and a second contact strip 48 isbonded to a second contact (e.g., n-contact 34) of the device 10A. Theplurality of openings 42, 44 are matched to the arrangement of theplurality of devices 10A, 10B on the wafer 60.

Once the patterned metal sheet 40 is bonded to the plurality of twoterminal devices 10A, 10B on the wafer 60, the metal sheet 40 can be cutaround each of the two terminal devices 10A, 10B. For example, asillustrated in FIG. 3, the patterned metal sheet 40 can be cut along thedotted lines to produce individual two terminal devices 10A, 10B thatare connected to electrodes (via the metal sheet 40).

In an embodiment, the patterned metal sheet 40 can be cut so that groupsof two terminal devices are connected in parallel or series in order tocreate, for example, multi-LEDs lamps. For example, turning to FIG. 4,the metal sheet 40 can be cut along the dotted lines to create twogroups of devices 72, 74. Each group of devices 72, 74 includes aplurality of devices connected in parallel. For example, a first group72 includes devices 10A-C connected in parallel and a second group 74includes devices 10D-F connected in parallel. Although each group 72, 74is shown to include three devices connected in parallel, it isunderstood that a group can include any number of one or more devices.

The patterned metal sheet 40 can also be cut so that a group of devicesare connected in series. For example, turning to FIG. 5, the metal sheet40 is cut along the dotted lines to create three groups of devices 72,74, 76. The first group 72 and the second group 74 of devices includes aplurality of devices connected in parallel. The first group 72 includesdevices 10B-10C connected in parallel and the second group 74 includesdevices 10E-10F connected in parallel. The third group 76 includesdevices 10A, 10D connected in series. The configuration of the devices(e.g., in parallel and/or in series) depends on the desired applicationfor the electronic circuit. FIG. 6A shows another example of anillustrative configuration of devices 10A-C on a metal sheet 40, wherethe devices 10A-C are connected in series. In FIG. 6A, the devices 10A-Care connected in series, as shown in the schematic illustration of FIG.6C. A difference in the configuration of FIG. 6A as compared to theconfiguration shown in FIG. 5 is that more devices can be assembled perunit area of the circuit in FIG. 5. FIG. 6B shows another example of anillustrative configuration of devices 10A-D on a metal sheet 40, inwhich the devices are connected in parallel and in series. FIG. 6D showsthe schematic illustration of FIG. 6B.

A group of devices located on the patterned metal sheet 40 can includeany combination of one or more types of devices. For example, a devicecan be an LED, a LD, a sensor, and/or the like. Turning now to FIG. 7A,an illustrative LED package array including at least one sensoraccording to an embodiment is shown. The array of devices includes asensor 10D located on the metal sheet 40, while devices 10A-C are LEDs.The devices 10A-C are shown in the first group of devices 72, while thesensor 10D is shown in the second group of devices 74. It is understoodthat each group of devices 72, 74 can include any number of devices. Thesensor 10D can be configured to form a feedback system for controllingthe devices 10A-C. Depending on how the metal sheet 40 is cut, adifferent circuit can be formed. For example, turning to FIG. 7B, themetal sheet 40 is cut along lines 75A, 75B, 75C. The schematicillustration of this circuit is shown in FIG. 7C. It is understood thatother circuit configurations are possible, depending on the type of cutlines performed on the metal sheet through the network of devices.Turning now to FIG. 7D, an illustrative system according to anembodiment is shown. The device assembly 80 can comprise an assemblythat includes at least one sensor 10D shown in FIG. 7A. A computersystem 82 can be configured to receive the output of the sensor 10D inthe device assembly 82 and include at least one module for optimizingthe emitted radiation from the devices 10A-C. The computer system 82 canbe configured to adjust the output of a power supply 84 in order tocontrol the devices 10A-C in the device assembly 80.

The devices located on the metal sheet 40 can include one or more threeterminal devices, such as transistors, and/or the like. Turning now toFIG. 8, an illustrative package array according to an embodiment isshown. The device 10 shown in FIG. 8 has three terminals that are eachbonded to a unique contact strip 46, 48, 49, respectively. A firstterminal T1 and a second terminal T2 of the device 10 is aligned withthe first contact strip 46 and the second contact strip 48,respectively. Therefore, the space between a first contact strip 46 anda second contact strip 48 is approximately the same as the distancebetween the first terminal T1 and the second terminal T2. Additionally,the third terminal T3 is aligned with the third contact strip 49, sothat the space between the second contact strip 48 and the third contactstrip 49 is approximately the same as the distance between the secondterminal T2 and the third terminal T3. Turning now to FIG. 9, anillustrative package array according to an embodiment is shown. In thisembodiment, the devices 10A-10E can be two terminal devices, such asLEDs, while the device 10F can be a different type of two terminaldevice, such as a zener diode. Furthermore, the package array caninclude another type of two terminal device, such as a sensor 10G. It isunderstood that this is just another example of a possible circuitconfiguration. Other two terminal devices can include Schottky diodes,tunnel diodes, varactor diodes, photodiodes, solar cells, and/or thelike.

Turning now to FIG. 10, an illustrative package array according to anembodiment is shown. In this embodiment, more than one metal sheet isprovided to create the package array. Each metal sheet can be bonded todifferent contacts of the devices. For example, a first metal sheet 40Ais provided for a first contact 32 of the device 10, while a secondmetal sheet 40B is provided for a second contact 34. In an embodiment,the first metal sheet 40A and the second metal sheet 40B can beseparated by an insulating material, such as silicon dioxide (SiO₂),silicon nitride (Si₃N₄), and/or the like, in order to prevent anelectrical short in the package array. This configuration can bebeneficial as it requires less cuts through the network of devices. Forexample, in the configuration shown in FIG. 10, the devices 10 are inparallel and require no additional cutting. It is further understoodthat the first metal sheet 40A and the second metal sheet 40B can havedifferent metallic properties. For example, the first metal sheet 40Acan be made from a first material and the second metal sheet 40B can bemade from a second material.

A device can undergo additional processing after the patterned metalsheet 40 is bonded to the devices 10A, 10B. For example, turning now toFIGS. 11A-11C, illustrative packaged two terminal devices 110A-110C areshown. Once each individual LED device 110A-110C is cut out, anencapsulant 50 can be placed onto the substrate 12 of the LED device110A-110C using any solution. Alternatively, each LED device 110A-110Ccan be encapsulated prior to cutting each LED device 110A-110C out. FIG.11A illustrates a top view of an illustrative two terminal LED device110A. FIG. 11B illustrates a cross sectional view of a two terminal LEDdevice 10 including the encapsulant 50.

The encapsulant 50 can comprise any type of material, which can beconfigured to improve light extraction from the LED device 10. Forexample, the encapsulant 50 can comprise a material that is indexmatched in order to decrease a total internal reflection from the devicesurfaces. An illustrative material is an epoxy resin material. Inanother embodiment, the encapsulant 50 is formed of a composite materialincluding a matrix material and at least one filler materialincorporated in the matrix material as shown and described in U.S.Patent Application Publication No. 2013/0078411, which is incorporatedherein by reference.

FIG. 11C illustrates an alternative embodiment of the two terminal LEDdevice 110C. In this embodiment, prior to depositing the encapsulant 50onto the substrate 12, a surface 52 of the substrate 12 can be roughenedto increase light extraction efficiency of the LED device 110C. To thisextent, the roughness can be formed using any combination of depositionand/or etching. For example, an illustrative roughening includesselective deposition and/or etching of nanoscale objects, such asnanodots and/or nanorods, of the substrate material to form large scale(e.g., a characteristic scale an order of magnitude larger than awavelength of the LED device) and/or small scale (e.g., a characteristicscale on the order of the wavelength of the LED device) roughnesscomponents. Such deposition and/or etching can be used to form periodicand/or non-periodic random patterns on the surface 52 of the substrate12.

In an embodiment illustrated in FIG. 12, a metal sheet 140 can beimprinted to include a three-dimensional depression 54 for accommodatingthe two terminal device 10. The metal sheet 140 can be imprinted usingany known technique. For example, the metal sheet 140 can be imprintedusing metal stamping. The metal sheet 140 can be imprinted prior tocutting the plurality of openings 42, 44 or after cutting the pluralityof openings 42, 44.

Turning now to FIG. 13A, a partial three-dimensional view of the metalsheet 140 including the three-dimensional depression 54 is shown. FIG.13B shows a cross sectional view of a two terminal device 10 cut alongline B′-B′. The two terminal device 10 is positioned at the bottom ofthe three-dimensional depression 54. The three-dimensional depression 54helps to reflect light emitted from a two terminal device 10 operatingas an LED or the like. The surface of the three-dimensional depression54 can be at least 50% reflective for the wavelength emitted by the LEDdevice 10.

Although FIG. 13B shows the three-dimensional depression 54 to be atrapezoidal shape, it is understood that the three-dimensionaldepression 54 can include any shape. For example, as seen in FIG. 15A,the three-dimensional depression 54 can include curved sides. Theencapsulant 50 can fill substantially all of the enclosure formed by thethree-dimensional depression 54.

In an embodiment, a dielectric layer can be deposited within the firstopening 42 between the first contact strip 46 and the second contactstrip 48. The dielectric layer 62 can include one or more dielectricmaterials. For example, the dielectric layer 62 shown in FIG. 14Aincludes three layers. The dielectric layer 62 can provide room forthermal expansion of the first contact strip 46 and the second contactstrip 48. Turning now to FIG. 14B, a dielectric layer 63 can bedeposited within the first opening 42 between a first device 10A and asecond device 10B. This dielectric layer 63 also can include one or moredielectric materials for device isolation.

FIGS. 15A-15D illustrate alternative embodiments of packaged LEDdevices. As mentioned above, FIG. 15A illustrates a three-dimensionaldepression 54 that includes curved sides. It is understood that thethree-dimensional depression 54 can include any profile. In FIG. 15B,the three-dimensional depression 154 can include a reflective coating64. The reflective coating 64 is on the surfaces of thethree-dimensional depression 154 that do not contact the LED device 10.The reflective coating 64 can help to further reflect light emitted fromthe LED device 10. The reflective coating 64 can include a thermallyconductive material with a thermal conductivity coefficient exceeding 10W/km. In an embodiment, the reflective coating 64 comprises aluminum. Amaterial reflective of ultraviolet radiation also can be utilized. Forexample, illustrative ultraviolet reflective materials include: polishedaluminum, a highly ultraviolet reflective expandingpolytetrafluoroethylene (ePTFE) membrane (e.g., GORE® DRP® DiffuseReflector Material), a fluoropolymer (e.g., Spectralon® by Labsphere,Inc.), and/or the like. Regardless, the reflective material can comprisea coating applied to an underlying substrate material.

The packaged LED device can include fluorescent material to indicate theon/off state of the LED device 10. In one embodiment, in FIG. 15C, ahole 66 can be formed within one of the contact strips 46, 48. Forexample, as shown in FIG. 15C, a hole 66 is shown formed within thesecond contact strip 48. The hole 66 also can extend through thereflective coating 64. The hole 66 can be filled with a fluorescentmaterial, such as phosphors (e.g., such as those used in white lightemitting diodes), semiconductor quantum dots having a band gap smallerthan the radiation emitted by the LED device 10 (e.g., in visiblewavelengths), and/or the like. When light is generated by the LED device10, the light can be observed through the hole 66. For example, if LEDdevice 10 is an ultraviolet LED that emits non-visible light, thefluorescent material within the hole 66 can be an indicator of theon/off state of the LED device 10. In an alternative embodiment, in FIG.15D, pockets 68 of fluorescent material can be placed on the reflectivecoating 64. These pockets 68 of fluorescent material can be used toindicate the on/off state of the LED device 10 or for providing visiblelight emission.

In an embodiment, the invention provides a method of designing and/orfabricating a circuit that includes one or more of the devices designedand fabricated as described herein. To this extent, FIG. 16 shows anillustrative flow diagram for fabricating a circuit 1026 according to anembodiment. Initially, a user can utilize a device design system 1010 togenerate a device design 1012 for a semiconductor device as describedherein. The device design 1012 can comprise program code, which can beused by a device fabrication system 1014 to generate a set of physicaldevices 1016 according to the features defined by the device design1012. Similarly, the device design 1012 can be provided to a circuitdesign system 1020 (e.g., as an available component for use incircuits), which a user can utilize to generate a circuit design 1022(e.g., by connecting one or more inputs and outputs to various devicesincluded in a circuit). The circuit design 1022 can comprise programcode that includes a device designed as described herein. In any event,the circuit design 1022 and/or one or more physical devices 1016 can beprovided to a circuit fabrication system 1024, which can generate aphysical circuit 1026 according to the circuit design 1022. The physicalcircuit 1026 can include one or more devices 1016 designed as describedherein.

In another embodiment, the invention provides a device design system1010 for designing and/or a device fabrication system 1014 forfabricating a semiconductor device 1016 as described herein. In thiscase, the system 1010, 1014 can comprise a general purpose computingdevice, which is programmed to implement a method of designing and/orfabricating the semiconductor device 1016 as described herein.Similarly, an embodiment of the invention provides a circuit designsystem 1020 for designing and/or a circuit fabrication system 1024 forfabricating a circuit 1026 that includes at least one device 1016designed and/or fabricated as described herein. In this case, the system1020, 1024 can comprise a general purpose computing device, which isprogrammed to implement a method of designing and/or fabricating thecircuit 1026 including at least one semiconductor device 1016 asdescribed herein.

In still another embodiment, the invention provides a computer programfixed in at least one computer-readable medium, which when executed,enables a computer system to implement a method of designing and/orfabricating a semiconductor device as described herein. For example, thecomputer program can enable the device design system 1010 to generatethe device design 1012 as described herein. To this extent, thecomputer-readable medium includes program code, which implements some orall of a process described herein when executed by the computer system.It is understood that the term “computer-readable medium” comprises oneor more of any type of tangible medium of expression, now known or laterdeveloped, from which a stored copy of the program code can beperceived, reproduced, or otherwise communicated by a computing device.

In another embodiment, the invention provides a method of providing acopy of program code, which implements some or all of a processdescribed herein when executed by a computer system. In this case, acomputer system can process a copy of the program code to generate andtransmit, for reception at a second, distinct location, a set of datasignals that has one or more of its characteristics set and/or changedin such a manner as to encode a copy of the program code in the set ofdata signals. Similarly, an embodiment of the invention provides amethod of acquiring a copy of program code that implements some or allof a process described herein, which includes a computer systemreceiving the set of data signals described herein, and translating theset of data signals into a copy of the computer program fixed in atleast one computer-readable medium. In either case, the set of datasignals can be transmitted/received using any type of communicationslink.

In still another embodiment, the invention provides a method ofgenerating a device design system 1010 for designing and/or a devicefabrication system 1014 for fabricating a semiconductor device asdescribed herein. In this case, a computer system can be obtained (e.g.,created, maintained, made available, etc.) and one or more componentsfor performing a process described herein can be obtained (e.g.,created, purchased, used, modified, etc.) and deployed to the computersystem. To this extent, the deployment can comprise one or more of: (1)installing program code on a computing device; (2) adding one or morecomputing and/or I/O devices to the computer system; (3) incorporatingand/or modifying the computer system to enable it to perform a processdescribed herein; and/or the like.

The foregoing description of various aspects of the invention has beenpresented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed, and obviously, many modifications and variations arepossible. Such modifications and variations that may be apparent to anindividual in the art are included within the scope of the invention asdefined by the accompanying claims.

What is claimed is:
 1. A device package array, comprising: a waferincluding a plurality of devices; and a metal sheet, wherein the metalsheet is patterned to include a plurality of openings extending throughthe metal sheet, wherein the metal sheet is bonded to the plurality ofdevices to form a first electrode and a second electrode for each of theplurality of devices, such that each opening in a first set of openingsof the plurality of openings of the metal sheet has a widthsubstantially similar to a distance between a first electrode and asecond electrode of a first device and each opening in a second set ofopenings of the plurality of openings has a width substantially similarto the width of each opening in the first set of openings.
 2. The devicepackage array of claim 1, wherein the first device is located over thefirst set of openings, such that a first contact and a second contact ofthe first device are directly bonded to the metal sheet on opposingsides of the first set of openings.
 3. The device package array of claim1, wherein at least one device in the plurality of devices is locatedover the second set of openings.
 4. The device package array of claim 1,wherein at least two devices in the plurality of devices are connectedin series.
 5. The device package array of claim 1, wherein at least twodevices in the plurality of devices are connected in parallel.
 6. Thedevice package array of claim 1, wherein the plurality of devicesincludes a first set of devices and a second set of devices, and whereinthe first set of devices are connected in parallel with the second setof devices.
 7. The device package array of claim 1, wherein a size ofthe metal sheet is substantially similar to a size of the waferincluding the plurality of devices.
 8. The device package array of claim1, wherein at least one of the plurality of devices is a two terminaldevice, wherein the two terminal device is one of: a light-emittingdiode, a laser diode, a Zener diode, or a sensor.
 9. The device packagearray of claim 1, wherein at least one of the plurality of devices is athree terminal device that is located over the first set of openings andthe second set of openings.
 10. A device package array comprising: awafer including a plurality of devices; a first metal sheet locatedadjacent to the wafer, wherein the first metal sheet is patterned toinclude a plurality of openings extending through the metal first sheet;and a second metal sheet located adjacent to the first metal sheet,wherein the second metal sheet is patterned to include a plurality ofopenings extending through the second metal sheet, wherein the firstmetal sheet and the second metal sheet are positioned such that theplurality of openings in the first metal sheet alternate with theplurality of openings in the second metal sheet, such that a firstelectrode in each device of the plurality of devices is bonded to thefirst metal sheet and a second electrode in each device of the pluralityof devices is bonded to the second metal sheet.
 11. The device packagearray of claim 10, further comprising an insulating material locatedbetween the first metal sheet and the second metal sheet.
 12. The devicepackage array of claim 10, wherein a size of the second metal sheet issubstantially similar to a size of the wafer including the plurality ofdevices.
 13. The device package array of claim 12, wherein a size of thefirst metal sheet is substantially similar to the size of the waferincluding the plurality of devices.
 14. The device package array ofclaim 10, wherein the first metal sheet is formed of a first metallicmaterial and the second metal sheet is formed of a second metallicmaterial, wherein the first metallic material is different from thesecond metallic material.
 15. The device package array of claim 10,wherein the first electrode is a p-type and the second electrode is ann-type.
 16. The device package array of claim 10, wherein the firstelectrode is an n-type and the second electrode is a p-type.
 17. Adevice package array comprising: a wafer including a plurality ofdevices; a first metal sheet located adjacent to the wafer, wherein thefirst metal sheet is patterned to include a plurality of openingsextending through the metal first sheet; a second metal sheet locatedadjacent to the first metal sheet, wherein the second metal sheet ispatterned to include a plurality of openings extending through thesecond metal sheet, wherein the first metal sheet and the second metalsheet are positioned such that the plurality of openings in the firstmetal sheet alternate with the plurality of openings in the second metalsheet, such that a first electrode in each device of the plurality ofdevices is bonded to the first metal sheet and a second electrode ineach device of the plurality of devices is bonded to the second metalsheet; and an insulating material located between the first metal sheetand the second metal sheet.
 18. The device package array of claim 17,wherein the first metal sheet is formed of a first metallic material andthe second metal sheet is formed of a second metallic material, whereinthe first metallic material is different from the second metallicmaterial.
 19. The device package array of claim 17, wherein the firstelectrode is a p-type and the second electrode is an n-type.
 20. Thedevice package array of claim 17, wherein the first electrode is ann-type and the second electrode is a p-type.